Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.62251+$404.849510+$394.288250+$386.1912100+$383.3748200+$381.2626500+$378.44621000+$376.68602000+$374.9258 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 109A 4Pin SOT-22782351+$181.227410+$176.499750+$172.8751100+$171.6144200+$170.6689500+$169.40821000+$168.62022000+$167.8323 -
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Category: IGBTtransistorDescription: Boost chopper NPT IGBT95471+$293.322510+$285.670650+$279.8041100+$277.7636200+$276.2332500+$274.19271000+$272.91742000+$271.6421 -
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Category: MOSpipeDescription: Trans MOSFET N-CH 500V 48A 4Pin SOT-22792611+$550.093310+$535.743050+$524.7412100+$520.9144200+$518.0444500+$514.21771000+$511.82592000+$509.4342 -
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Category: IGBTtransistorDescription: ISOTOPBoost chopper NPT IGBT ISOTOP Boost chopper NPT IGBT35741+$158.281410+$154.152350+$150.9867100+$149.8856200+$149.0598500+$147.95871000+$147.27052000+$146.5823 -
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Category: Schottky diodeDescription: Ultra fast recovery rectifier 16A to 330A, Vishay Semiconductor diode and rectifier, Vishay Semiconductor84711+$330.107510+$321.496050+$314.8939100+$312.5975200+$310.8752500+$308.57881000+$307.14352000+$305.7083 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.61431+$157.466110+$153.358250+$150.2089100+$149.1135200+$148.2919500+$147.19651000+$146.51192000+$145.8273 -
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Category: MOSpipeDescription: SOT-227 N-CH 500V 40A10801+$158.970310+$154.823250+$151.6438100+$150.5379200+$149.7085500+$148.60261000+$147.91152000+$147.2203 -
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Category: MOSpipeDescription: SOT-227 N-CH 200V 220A27401+$297.306110+$289.550250+$283.6041100+$281.5359200+$279.9847500+$277.91651000+$276.62392000+$275.3313 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 149A 862000mW 4Pin SOT-22788891+$234.042310+$227.936850+$223.2560100+$221.6278200+$220.4067500+$218.77861000+$217.76112000+$216.7435 -
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Category: Schottky diodeDescription: Ultra fast recovery rectifier 16A to 330A, Vishay Semiconductor diode and rectifier, Vishay Semiconductor47441+$177.339210+$172.713050+$169.1662100+$167.9325200+$167.0073500+$165.77361000+$165.00262000+$164.2315 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 147A 625000mW 4Pin SOT-22788301+$210.892810+$205.391250+$201.1733100+$199.7063200+$198.6060500+$197.13891000+$196.22202000+$195.3050 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.26271+$181.501110+$176.766250+$173.1362100+$171.8736200+$170.9266500+$169.66401000+$168.87492000+$168.0858 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 400A 961000mW 4Pin SOT-22741361+$594.578410+$573.716050+$571.1082100+$568.5004150+$564.3279250+$560.6770500+$557.02611000+$552.8536
